The electron charging effects of plasma on notch profile defects

Japanese Journal of Applied Physics

Volumn 34, Issue 4, 1995, Pages 2107-2113

  Nozawa, Toshihisa ^a   Kinoshita, Takashi ^a   Nishizuka, Tetsuya ^a   Narai, Akira ^a   Inoue, Takayoshi ^a   Nakaue, Akimitsu ^a  

^a KOBE STEEL LTD   (Japan)

Author keywords

Charge up; Distortion; ECR plasma; Etching; Line and space structure; Notch; Polysilicon

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; IONIC CONDUCTION; IONS; LSI CIRCUITS; PLASMAS; SCANNING ELECTRON MICROSCOPY;

CHARGE UP; DISTORTION; ELECTRON CHARGING EFFECTS; LINE AND SPACE STRUCTURE; NOTCH; POLYSILICON; TEST MASK PATTERN;

PLASMA ETCHING;

EID: 0029292835     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.2107     Document Type: Article

References (6)

1. T. Nozawa, T. Kinoshita, T. Nishizuka, K. Suzuki and A.Nakaue: Proc. Symp. Highly Selective Dry Etching and DamageControls ed. G. S. Mathad and Y. Horiike (The Electrochem. Soc., Pennington, 1993) p. 134.
2. T. Nozawa, T. Kinoshita, T. Nishizuka, K. Suzuki and A.Nakaue: Conference Proc. 2nd International Conference on Reactive Plasmas and 11th Symposium on Plasma Processing (2ndInternational Conference on Reactive Plasmas and 11th Symposium on Plasma Processing, Nagoya, 1994) p. 447.
3. T. Oomori, N. Fujiwara, M. Toyoda and Y. Eshima: Semicond.World 10 (Press Journal, Tokyo, 1992) 94 [in Japanese].
4. N. Fujiwara, T. Maruyama, M. Yoneda and K. Tsukamoto:Proc. Symp. Dry Process (The Institute of Electrical Engineersof Japan, Tokyo, 1993) p. 45.
5. K. Hashimoto, T. Ohtsuka, K. Kawaguchi, M. Aoyama and D.Matsunaga: Proc. Symp. Dry Process (The Institute of ElectricalEngineers of Japan, Tokyo, 1993) p. 33.
6. S. Murakawa and J. P. McVittie: Proc. Symp. Dry Process (TheInstitute of Electrical Engineers of Japan, Tokyo, 1993) p. 39.