Dielectric properties of srtiO3 thin films grown by ozone-assisted molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 34, Issue 4R, 1995, Pages 1906-1910

  Nakamura, Takao ^a   Tokuda, Hitoki ^a   Tanaka, So ^a   Iiyama, Michitomo ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Breakdown voltage; Epitaxial growth; Field effect; MBE; Relative dielectric constant; SrTiO3

Indexed keywords

CRYSTALLINITY; INSULATING PROPERTIES; PULSED LASER DEPOSITION; STRONTIUM TITANATE;

CRYSTALLINE MATERIALS; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; EPITAXIAL GROWTH; FABRICATION; FERROELECTRIC MATERIALS; MOLECULAR BEAM EPITAXY; PULSED LASER APPLICATIONS; SUBSTRATES; SURFACE PROPERTIES; THIN FILMS;

STRONTIUM COMPOUNDS;

EID: 0029291036     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.1906     Document Type: Article

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