메뉴 건너뛰기




Volumn 16, Issue 4, 1995, Pages 130-132

Effects of Electrical Stress Parameters on Polarization Loss in Ferroelectric P(L)ZT Thin Film Capacitors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTRIC NETWORK PARAMETERS; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; POLARIZATION; RANDOM ACCESS STORAGE; STRESSES; THIN FILM DEVICES;

EID: 0029290461     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.372491     Document Type: Article
Times cited : (4)

References (17)
  • 2
    • 84936904469 scopus 로고
    • Storage capacitor dielectric issues and requirements in gigabit one-transistor cell MOS DRAMs
    • A. F. Tasch, “Storage capacitor dielectric issues and requirements in gigabit one-transistor cell MOS DRAMs,” 184th ECS Meeting Extended Abstracts, p. 238, 1993.
    • (1993) 184th ECS Meeting Extended Abstracts , pp. 238
    • Tasch, A.F.1
  • 3
    • 84968232682 scopus 로고
    • Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAMs
    • R. Moazzami, P. D. Maniar, R. E. Jones, Jr., A. C. Campbell, and C. J. Mogab, “Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAMs,” IEDM Tech. Dig., p. 973, 1992.
    • (1992) IEDM Tech. Dig. , pp. 973
    • Moazzami, R.1    Maniar, P.D.2    Jones, R.E.3    Campbell, A.C.4    Mogab, C.J.5
  • 8
    • 0028461449 scopus 로고
    • Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors
    • J. Lee, S. Esayan, A. Safari, and R. Ramesh, “Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors,” Appl. Phys. Lett., vol. 65, p. 254, 1994.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 254
    • Lee, J.1    Esayan, S.2    Safari, A.3    Ramesh, R.4
  • 9
    • 36449008853 scopus 로고
    • Effects of disturbing pulses on the switchable polarization of Pb(ZrTi)O3 thin film capacitors
    • D. J. Taylor, P. K. Larsen, and R. Cuppens, “Effects of disturbing pulses on the switchable polarization of Pb(ZrTi)O3 thin film capacitors,” Appl. Phys. Lett., vol. 64, p. 1393, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1393
    • Taylor, D.J.1    Larsen, P.K.2    Cuppens, R.3
  • 10
    • 0343680922 scopus 로고
    • Fatigue and aging in Sol-Gel derived PZT thin films
    • W. H. Shepherd, “Fatigue and aging in Sol-Gel derived PZT thin films,” Mat. Res. Soc. Symp. Proc., vol. 200, p. 277, 1990.
    • (1990) Mat. Res. Soc. Symp. Proc. , vol.200 , pp. 277
    • Shepherd, W.H.1
  • 11
    • 0025575598 scopus 로고
    • Endurance properties of ferroelectric PZT thin films
    • R. Moazzami, C. Hu, and W. Shepherd, “Endurance properties of ferroelectric PZT thin films,” IEDM Tech. Dig., p. 417, 1990.
    • (1990) IEDM Tech. Dig. , pp. 417
    • Moazzami, R.1    Hu, C.2    Shepherd, W.3
  • 12
    • 0024918267 scopus 로고
    • Electrical and reliability characteristics of lead zirconate-titanate (PZT) ferroelectric thin films for DRAM applications
    • J. Carrano, C. Sudhama, J. Lee, A. Tasch, and W. Miller, “Electrical and reliability characteristics of lead zirconate-titanate (PZT) ferroelectric thin films for DRAM applications,” IEDM Tech. Dig., p. 255, 1989.
    • (1989) IEDM Tech. Dig. , pp. 255
    • Carrano, J.1    Sudhama, C.2    Lee, J.3    Tasch, A.4    Miller, W.5
  • 14
    • 21544465649 scopus 로고
    • Quantitative measurement of space-charge effects in lead-zirconate- titanate memories
    • J. F. Scott, C. A. Arauzo, B. M. Melnick, L. D. McMillan, and R. Zuleeg, “Quantitative measurement of space-charge effects in lead-zirconate- titanate memories,” J. Appl. Phys., vol. 70, p. 382, 1991.
    • (1991) J. Appl. Phys. , vol.70 , pp. 382
    • Scott, J.F.1    Arauzo, C.A.2    Melnick, B.M.3    McMillan, L.D.4    Zuleeg, R.5
  • 15
    • 0001047020 scopus 로고
    • Space charge effect in lead zirconate titanate ceramics caused by the addition of impurities
    • M. Takahashi, “Space charge effect in lead zirconate titanate ceramics caused by the addition of impurities,” Jap. J. Appl. Phys., vol. 9, p. 1236, 1970.
    • (1970) Jap. J. Appl. Phys. , vol.9 , pp. 1236
    • Takahashi, M.1
  • 17
    • 33646571747 scopus 로고
    • Radiation effects on ferroelectric thin-film memories: Retention failure mechanism
    • J. F. Scott, C. A. Araujo H. Brett Meadows, L. D. McMillan, and A. Shawabkeh, “Radiation effects on ferroelectric thin-film memories: Retention failure mechanism,” J. Appl. Phys., vol. 66, p. 1444, 1989.
    • (1989) J. Appl. Phys. , vol.66 , pp. 1444
    • Scott, J.F.1    Araujo, C.A.2    Brett Meadows, H.3    McMillan, L.D.4    Shawabkeh, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.