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Volumn 34, Issue 4R, 1995, Pages 1772-1777

Vacancy-type defects in ion-implanted diamonds probed by monoenergetic positron beams

(8) Uedono, Akira a Kawano, Takao a Tanigawa, Shoichiro a Suzuki, Ryoichi a,b Ohdaira, Toshiyuki a,b Mikado, Tomohisa a,b Fujii, Satoshi a,c Shikata, Shinichi a,c

a UNIVERSITY OF TSUKUBA (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

c SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

Defect; Diamond; Ion implantation; Monoenergetic positron beam; Positron annihilation

Indexed keywords

ANNIHILATION RADIATION; INCIDENT POSITRON ENERGY; MONOENERGETIC POSITRON BEAMS; POSITRON ANNIHILATION; POSITRONS; VACANCY TYPE DEFECTS;

DEFECTS; DIFFUSION; DOPPLER EFFECT; ELECTRON SCATTERING; ENERGY DISSIPATION; IMPURITIES; ION IMPLANTATION; IONS; MONTE CARLO METHODS; RADIATION; SPECTROMETRY;

DIAMONDS;

EID: 0029290249 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.34.1772 Document Type: Article

Times cited : (19)

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