High slope efficiency and low threshold in a diode-pumped epitaxially grown Yb:YAG waveguide laser

Optics Communications

Volumn 115, Issue 5-6, 1995, Pages 491-497

  Pelenc, D ^a   Chambaz, B ^a   Chartier, I ^a   Ferrand, B ^a   Wyon, C ^a   Shepherd, D P ^b   Hanna, D C ^b   Large, A C ^b   Tropper, A C ^b  

^a CEA LETI   (France)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; LASER APPLICATIONS; LIQUID PHASE EPITAXY; OPTICAL MULTILAYERS; PUMPING (LASER); REFRACTIVE INDEX; SEMICONDUCTOR LASERS; WAVEGUIDES; YTTERBIUM;

DIODE PUMPED LASER; EXCITED STATE ABSORPTION; HIGH SLOPE EFFICIENCY; MULTILAYER PLANAR WAVEGUIDES; QUASI THREE LEVEL NATURE; WAVEGUIDE LASER; YTTRIUM ALUMINUM GARNET;

SOLID STATE LASERS;

EID: 0029290192     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/0030-4018(95)00015-Z     Document Type: Article

References (13)