Deposition of thick doped polysilicon films with low stress in an epitaxial reactor for surface micromachining applications

Thin Solid Films

Volumn 259, Issue 2, 1995, Pages 181-187

  Kirsten, M ^a   Wenk, B ^a   Ericson, F ^b   Schweitz, J A ^b   Riethmuller W ^a   Lange, P ^a  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Deposition process; Sensors; Silicon; Stress

Indexed keywords

CHARACTERIZATION; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GRAIN GROWTH; MECHANICAL PROPERTIES; MORPHOLOGY; PRESSURE EFFECTS; RESIDUAL STRESSES; SURFACE ROUGHNESS; THERMAL EFFECTS;

DEPOSITION RATE; DEPOSITION TEMPERATURE; EPITAXIAL BATCH REACTOR; POLYSILICON FILM; POLYSILICON NUCLEATION LAYER; SOURCE GAS FLOW EFFECT; STRESS GRADIENT;

PLASTIC FILMS;

EID: 0029288648     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)06449-0     Document Type: Article

References (22)

1. As-deposited low-strain LPCVD polysilicon
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3. Thin films for micromechanical sensors
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5. Nucleation and growth of silicon on SiO2 during SiH4 low pressure chemical vapor deposition as studied by hydrogen desorption titration
6. Deposition and Crystallization of a-Si Low Pressure Chemically Vapor Deposited Films Obtained by Low-Temperature Pyrolysis of Disilane
7. Design properties of polycrystalline silicon
8. Mechanical Characterization of Thin Films by Micromechanical Techniques
9. Reduced-pressure chemical vapor deposition of polycrystalline silicon