Numerical analysis of a trench VDMOST structure with no quasi-saturation

Solid State Electronics

Volumn 38, Issue 4, 1995, Pages 821-828

  Zeng, J ^a   Mawby, P A ^a   Towers, M S ^a   Board, K ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; MOS DEVICES; MOSFET DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

ACCUMULATION LAYER; DRIFT REGION; DRIFT REGION RESISTANCE; QUASI SATURATION; TWO DIMENSIONAL; VELOCITY SATURATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029287982     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00183-G     Document Type: Article

References (8)

1. Study of the quasi-saturation effect in VDMOS transistors
2. HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS
3. IEEE Power Electron. Specialists Conf. Proc.