Growth of InAsSb quantum wells for long-wavelength (approx.4 μm) lasers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 2, 1995, Pages 699-701

  Turner, G W ^a   Choi, H K ^a   Le, H Q ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; HETEROJUNCTIONS; LASERS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TEMPERATURE;

CLADDING LAYERS; COMPRESSIVE STRAIN; EMISSION WAVELENGTH; INTERFACE CONTROL; ION PUMPS; LATTICE MATCHING; QUANTUM WELL LASER STRUCTURES; TENSILE STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029275828     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588139     Document Type: Article

References (8)