Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 2, 1995, Pages 696-698

  Shimomura, S ^a   Shinohara, K ^a   Kitada, T ^a   Hiyamizu, S ^a   Tsuda, Y ^a   Sano, N ^a   Adachi, A ^a   Okamoto, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ERRORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OSCILLATIONS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ATOMICALLY FLAT INTERFACES; BEAM EQUIVALENT PRESSURE; GROWTH RATES; PRESSURE RATIO; SULFURIC ACID ETCHANT SOLUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029275572     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588138     Document Type: Article

References (6)