Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

Electronics Letters

Volumn 31, Issue 7, 1995, Pages 560-562

  Hayashi, Y ^a   Mukaihara, T ^a   Hatori, N ^a   Ohnoki, N ^a   Matsutani, A ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Semiconductor lasers; Vertical cavity surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; HEAT RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; OXIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRICAL CONFINEMENT; NATIVE OXIDE CONFINEMENT STRUCTURE; NONRADIATIVE RECOMBINATION; OPTICAL CONFINEMENT; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029273231     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950391     Document Type: Article

References (9)

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