Thin-Film Decoupling Capacitors for Multichip Modules

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

Volumn 18, Issue 1, 1995, Pages 174-179

  Dimos, Duane ^a   Lockwood, Steven J ^a   Schwsartz, Robert W ^a   Rodgers, M Steven ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CERAMIC CAPACITORS; ELECTRIC INSULATION; ELECTRIC LOSSES; ELECTRIC RESISTANCE; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; FERROELECTRIC MATERIALS; INTEGRATED CIRCUITS; MULTICHIP MODULES; PERMITTIVITY; THIN FILMS;

BREAKDOWN FIELD STRENGTH; FERROELECTRIC LEAD LANTHANUM ZIRCONATE TITANATE; INTERCONNECT INDUCTANCE; METAL CARBOXYLATE SOLUTIONS; PARASITIC COMPONENTS; SOL GEL DEPOSITION; THIN FILM DECOUPLING CAPACITORS; THIN FILM GEOMETRY;

CAPACITORS;

EID: 0029271853     PISSN: 10709886     EISSN: None     Source Type: Journal    
DOI: 10.1109/95.370752     Document Type: Article

References (21)

1. B. K. Gilbert and W. L. Walters, “Design guidelines for digital multichip modules operating at high system clock rates,” Int. J. Microcircuits and Elec. Packaging, vol. 15, p. 171, 1992.
2. R. C. Frye, “Silicon-on-silicon mcms with integrated passive components,” in Proc. 1992 IEEE MCM Conf., 1992, p. 155.
3. J. Chen, K. R. Udayakumar, K. G. Brooks, and L. E. Cross, “Dielectric behavior of ferroelectric thin films at high frequencies,” in Proc. IEEE 8th ISAF, 1992, p. 182.
4. O. Kersten and G. Schmidt, “Dielectric dispersion in PZT ceramics,” Ferroelectrics, vol. 67, p. 191, 1986.
5. J. F. Scott and C. A. Paz de Araujo, “Ferroelectric memories,” Science, vol. 246, p. 1400, 1989.
6. K. R. Udayakumar, J. Chen, K. G. Brooks, L. E. Cross, A. M. Flynn, and D. J. Ehrlich, “Piezoelectric thin film ultrasonic transducers,” Mat. Res. Soc. Symp. Proc., vol. 243, p. 49, 1992.
7. C. Ye, T. Yamagawa, Y. Lin, and D. L. Polla, “Pyroelectric microsensors by sol-gel derived PbTiO3and La-PbTiO3thin films,” Mat. Res. Soc. Symp. Proc., vol. 243, p. 61, 1992.
8. C. E. Land, “Bistable optical information storage using antiferroelectric-phase lead lanthanum zirconate titanate ceramics,” J. Am. Ceram. Soc., vol. 71, p. 905, 1988.
9. R. W. Schwartz, D. Dimos, S. J. Lockwood, and V. M. Torres, “Electrical properties of sol-gel PZT thin films for decoupling capacitor applications,” Mat. Res. Soc. Symp. Proc., vol. 310, p. 59, 1992.
10. R. W. Schwartz, D. Dimos, S. J. Lockwood, and V. M. Torres, “Preparation and properties of sol-gel derived PZT thin films for decoupling capacitor applications,” Integrated Ferroelectrics, 1993.
11. C. E. Land, P. D. Thacher, and G. H. Haertling, “Electrooptic ceramics,” in Applied Solid State Science, Advances in Materials and Device Research, R. Wolfe Ed., vol. 4, New York: Academic Press, 1974, p. 137.
12. D. Dimos, R. W. Schwartz, and S. J. Lockwood, “Control of leakage resistance in Pb(Zr,Ti)O3films by donor doping,” J. Am. Ceram. Soc., vol. 77, no. 11, p. 3000, Nov. 1994.
13. H. Y. Lee, K.C. Lee, J. N. Schunke, and L. C. Burton, “Leakage currents in multilayer ceramic capacitors,” IEEE Trans. Comp., Hybrids, Manuf. Tech., vol. CHMT-7, p. 443, 1984.
14. R. W. Schwartz, B. C. Bunker, D. B. A. Tuttle, D. R. Tallant, and I. A. Weinstock, “Solution chemistry effects in Pb(Zr,Ti)O3thin film processing,” Integrated Ferroelectrics, vol. 2, p. 243, 1992.
15. R. A. Assink and R. W. Schwartz, H and C NMR investigations of Pb(Zr,Ti)O3thin-film precursor solutions,” Chem. Mater., vol. 5, p. 511, 1993.
16. S. J. Lockwood, R. W. Schwartz, B. A. Tuttle, V. “Solution chemistry optimization of sol-gel processed PZT thin films,” Mat. Res. Soc. Symp. Proc., vol. 310, p. 275, 1993.
17. C. Sudhama, J. Kim, J. Lee, V. Chikarmane, W. Shepherd, and E. R. Myers, “Effect of lanthanum doping on the electrical properties of sol-gel derived ferroelectric lead-zirconate-titanate for ultra-large-scale integration dynamic random access memory applications,” J. Vac. Sci. Tech. B, vol. 11, p. 1302, 1993.
18. R. Moazzami, C. Hu, and W. H. Shepherd, “Electrical conduction and breakdown in sol-gel derived PZT thin films,” in Proc. Int. Reliability Physics Symp., 1990, p. 231.
19. L. Wu, T.S. Wu, C.C. Wei, and H.C. Liu, “The dc resistivity of modified PZT ceramics,” J. Phys. C: Sol. Stat. Phys., vol. 16, p. 2823, 1983.
20. R. Waser, T. Baiatu, and K.H. Hardtl, “DC electrical degradation of perovskite-type titanates: I. II and III,” J. Am. Ceram. Soc., vol. 73, p. 1645, 1990.
21. M. Kahn, D. P. Burks, I. Bum, and W. A. Schulze, “Ceramic Capacitor Technology,” in Electronic Ceramics, L. M. Levinson Ed., New York: Marcel Dekker, 1988, pp. 251–255.