Characterization of functional relationship between temperature and microelectronic reliability

Microelectronics Reliability

Volumn 35, Issue 3, 1995, Pages 377-402

  Lall, Pradeep ^a   Pecht, Michael ^a   Hakim, Edward B ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRONIC EQUIPMENT; ELECTRONICS PACKAGING; FAILURE ANALYSIS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; RELIABILITY; SEMICONDUCTING SILICON;

FIRST LEVEL INTERCONNECTS; FUNCTIONAL RELATIONSHIP; MICROELECTRONIC RELIABILITY; STEADY STATE TEMPERATURE; TIME DEPENDENT TEMPERATURE CHANGE;

MICROELECTRONICS;

EID: 0029271008     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(95)93067-K     Document Type: Review

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35. Constant Failure Rate: A Paradigm Transition
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38. Caution: Electrostatic Discharge at Work
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49. 2 Films
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58. Phenomenological Observations on Electromigration
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60. Impact of Copper Contamination on the Quality of Silicon Oxides
61. Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown
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63. The Bathtub Does Not Hold Water Any More
64. What Is Wrong With the Existing Reliability Prediction Methods?
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