Effect of impact ionization on CJC of heterojunction bipolar transistors

Solid State Electronics

Volumn 38, Issue 3, 1995, Pages 742-744

  Yuan, J S ^a   Ning, J H ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; FORECASTING; IONIZATION; MATHEMATICAL MODELS; PERMITTIVITY;

COLLECTOR BASE JUNCTION CAPACITANCE; DOPING CONCENTRATION; ELECTRON CONCENTRATION; IMPACT IONIZATION; SHOCKLEY READ HALL RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029270982     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00163-A     Document Type: Article

References (11)

1. A new charge-control model for single- and double-heterojunction bipolar transistors
2. Forward-voltage capacitance and thickness of p-n junction space-charge regions
3. Base-collector junction capacitance of bipolar transistors operating at high current densities