Modeling Buffer Layer IGBTs For Circuit Simulation

IEEE Transactions on Power Electronics

Volumn 10, Issue 2, 1995, Pages 111-123

  Hefner, Allen R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; BUFFER CIRCUITS; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; DYNAMICS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ENERGY DISSIPATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

BUFFER LAYER; CIRCUIT SIMULATION; DIFFUSIVITY; INSULATED GATE BIPOLAR TRANSISTORS; POWER DISSIPATION; SABER CIRCUIT SIMULATOR; USER DEFINED APPLICATION CIRCUITS;

MOSFET DEVICES;

EID: 0029267581     PISSN: 08858993     EISSN: 19410107     Source Type: Journal    
DOI: 10.1109/63.372596     Document Type: Article

References (16)

1. H. W. Becke and C. F. Wheatley, “Power MOSFET's with an anode region,” United States Patent 4,364,073, 1982.
2. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, “The insulated gate rectifier: (IGR)” in Conf. Proc. IEEE IEDM, p. 264, 1982.
3. A. R. Hefner and D. L. Blackburn, “An analytical model for the steady-state and transient characteristics of the power insulated gate bipolar transistor,” Solid-State Electron., vol. 31, p. 1513, 1988.
4. A. R. Hefner and D. L. Blackburn, ”Performance trade-off for the insulated gate bipolar transistor: buffer layer versus base lifetime reduction,” IEEE Trans. Power Electron., PE-2, p. 194, 1987; also in IEEE PESC Conf. Rec., p. 27, 1986.
5. A. R. Hefner, “Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT),” in IEEE IAS Conf. Rec., p. 606, 1988; also in IEEE Trans. Ind. Appl., IA-26, p. 995, 1990.
6. A. R. Hefner, “An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT),” in IEEE PESC Conf. Rec., p. 126, 1990; also in IEEE Trans. Power Electron., PE-6, p. 208, 1991.
7. A. R. Hefner, ”An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT),” in IEEE PESC Conf. Rec., p. 303, 1989; also in IEEE Trans. Power Electron., PE-5, p. 459, 1990.
8. A. R. Hefner, ”Semiconductor measurement technology: INSTANT - IGBT network simulation and transient analysis tool,” NIST Special Publication 400-88, 1992.
9. A. R. Hefner and D. M. Diebolt, “An experimentally verified IGBT model implemented in the saber circuit simulator,” in IEEE PESC Conf Rec., p. 10, 1991; also in IEEE Trans. Power Electron., vol. 9, 1994.
10. C. S. Mitter, A. R. Hefner, D. Y. Chen, and F. C. Lee, “Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE,” in IEEE IAS Conf. Rec., p. 1515, 1991; also in IEEE Trans. Ind. Applicat., IA-30, 24, 1994.
11. A. R. Hefner, “A dynamic electro-thermal model for the IGBT,” in IEEE IAS Conf. Rec., p. 1094, 1992; also in IEEE Trans. Ind. Applicat., vol. 30, p. 394, 1994.
12. A. R. Hefner and D. L. Blackburn, “Simulating the dynamic electrothermal behavior of power electronic circuits and systems,” in Conf. Rec. IEEE Workshop on Computers in Power Electronics, p. 143 (1992); also in IEEE Transactions on Power Electronics, vol. 8, pp. 376 (1993).
13. A. R. Hefner and D. L. Blackburn, “Thermal component models for electro-thermal network simulation,” in Proc. IEEE Semiconductor Thermal Measurement and Manage. SEMI-THERM Symp., p. 88, 1993; also in IEEE Trans. Components, Packaging, and Manufacturing Technol., vol. 17, p. 413, 1994.
14. S. Selberherr, Analysis and Simulation of Semiconductor Devices. New York: Springer-Verlag, 1984, p. 88.
15. A. R. Hefner, “Device models, circuit simulation, and computer-controlled measurements for the IGBT,” in Conf. Rec. IEEE Workshop Computers in Power Electron., p. 233, 1990.
16. H. A. Mantooth and A. R. Hefner, “Electro-thermal simulation of an IGBT PWM inverter,” in IEEE PESC Conf. Rec., 1993.