Ultralow Threshold Current Vertical-Cavity Surface-Emitting Lasers with AlAs Oxide—GaAs Distributed Bragg Reflectors

IEEE Photonics Technology Letters

Volumn 7, Issue 3, 1995, Pages 229-231

  MacDougal, Michael H ^a   Dapkus, P Daniel ^a   Pudikov, Vasily ^a   Zhao, Hanmin ^a   Yang, Gye Mo ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LIGHT EMISSION; MIRRORS; OXIDATION; OXIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT FLOW; DISTRIBUTED BRAGG REFLECTORS; ELECTRIC PUMPING; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029267483     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.372729     Document Type: Article

References (12)

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