Vertical transport properties of photogenerated carrier in ingaas/gaas strained multiple quantum wells

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 1358-1361

  Kitatani, Takeshi ^a   Yazawa, Yoshiaki ^a   Minemura, Junko ^a   Tamura, Katsumi ^a   Warabisako, Terunori ^a  

^a HITACHI LTD   (Japan)

Author keywords

Carrier escape; Photocurrent; Photodiode; Quantum efficiency; Recombination

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; ELECTRONS; PHOTODIODES; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSPORT PROPERTIES;

CARRIER ESCAPE; PHOTOCURRENT; PHOTOCURRENT MEASUREMENT; PHOTOGENERATED CARRIERS; RECOMBINATION; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029256303     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.1358     Document Type: Article

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