메뉴 건너뛰기




Volumn 93, Issue 6, 1995, Pages 473-477

Triplet excitons in porous silicon and siloxene

Author keywords

Electron paramagnetic resonance; Luminescence; Semiconductors

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; MAGNETIC RESONANCE; MICROSCOPIC EXAMINATION; MICROSTRUCTURE; PHOTOLUMINESCENCE; PHOTONS;

EID: 0029254884     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(94)00819-1     Document Type: Article
Times cited : (46)

References (30)
  • 1
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • (1990) Applied Physics Letters , vol.57 , pp. 10416
    • Canham1
  • 8
    • 0019593398 scopus 로고
    • Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductors
    • (1981) Advances in Physics , vol.30 , pp. 475
    • Cavenett1
  • 10
    • 0001359747 scopus 로고
    • Since the ODMR measurements are performed under constant laser excitation and take about 30 min, it is not possible to investigate unoxidized porous silicon due to the rapid thermal photooxidation of this material even in inert gas ambients
    • (1992) Appl. Phys. Lett. , vol.60 , pp. 639
    • Tischler1    Collins2    Stathis3    Tsang4
  • 12
    • 84919238950 scopus 로고    scopus 로고
    • For the following discussion, the exciton is assumed to be self-trapped or localized by structural disorder so that its orbital angular momentum is quenched by the crystal field. This is usually a valid assumption for localized states in strongly disordered semiconductors, where contributions of the orbital momentum to the spin Hamiltonian only enter as second-order perturbation. Typical for these systems are g-values very close to the free electron value. The same holds for porous silicon.
  • 18
    • 84919238949 scopus 로고    scopus 로고
    • The low-magnetic field feature in the upper specturn of Fig. 2 contains structure due to nonresonant magnetic field dependence of the luminescence intensity as well as resonant, microwave dependent contributions and is not fully understood. One possibility is a level-crossing due to a large zero-field splitting.
  • 22
    • 84919238948 scopus 로고    scopus 로고
    • Simulation of the resonance lines shows that they can indeed be described as broadened Pakedoubletts. Taking the linewidth as a measure for the splitting in the worst case leads to an overestimation of the splitting by 10%.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.