The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 771-775

  Kuroi, Takashi ^a   Kobayashi, Maiko ^a   Shirahata, Masayoshi ^a   Okumura, Yoshiki ^a   Kusunoki, Shigeru ^a   Inuishi, Masahide ^a   Tsubouchi, Natsuro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Boron penetration; CMOS; Dual gate structure; Hot carrier; Nitrided oxide; Nitrogen ion implantation; Oxide reliability; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; FAILURE (MECHANICAL); FILMS; HEAT TREATMENT; HOT CARRIERS; NITROGEN; OXIDE SUPERCONDUCTORS; PERFORMANCE; RELIABILITY; SEMICONDUCTING SILICON;

BORON PENETRATION; GATE OXIDE FILM; HIGHLY DOPED POLYSILICONE GATES; NITRIDED OXIDE; NITROGEN IMPLANTATION; SUBQUARTER MICRON DUAL GATE;

ION IMPLANTATION;

EID: 0029254507     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.771     Document Type: Article

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