High-temperature etching of pzt/pt/tin structure by high-density ecr plasma

Japanese Journal of Applied Physics

Volumn 34, Issue 2S, 1995, Pages 767-770

  Yokoyama, Seiichi ^a   Ito, Yasuyuki ^a   Ishihara, Kazuya ^a   Hamada, Kazuyuki ^a   Ohnishi, Shigeo ^a   Kudo, Jun ^a   Sakiyama, Keizo ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Dry etching; ECR plasma; High temperature; Pt; PZT

Indexed keywords

HYDROCHLORIC ACID; MASKS; PLASMAS; PLATINUM; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY DISPERSIVE X RAY SPECTROSCOPY ANALYSIS; HIGH DENSITY ELECTRON CYCLOTRON RESONANCE PLASMA; LEAD ZIRCONATE TITANATE; SPIN ON GLASS MASK; SUBMICRON PATTERNING TECHNOLOGY;

ETCHING;

EID: 0029254328     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.767     Document Type: Article

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