Analysis of Ultrafast Photocarrier Transport in AlInAs–GaInAs Heterojunction Bipolar Transistors

IEEE Journal of Quantum Electronics

Volumn 31, Issue 2, 1995, Pages 278-285

  Frankel, Michael Y ^a   Carruthers, Thomas F ^a   Kyono, Carl S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; ELECTROOPTICAL EFFECTS; EQUIVALENT CIRCUITS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; ULTRAFAST PHENOMENA;

PHOTOCARRIER INJECTION; PHOTORESPONSE BANDWIDTH; ULTRAFAST PHOTOCARRIER TRANSPORT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029253480     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.348056     Document Type: Article

References (19)

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