메뉴 건너뛰기




Volumn 42, Issue 1, 1995, Pages 33-40

Effects of Package Geometry, Materials, and Die Design on Energy Dependence of pMOS Dosimeters

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; DIELECTRIC DEVICES; ELECTRONICS PACKAGING; INTERFACES (MATERIALS); MOSFET DEVICES; SILICON NITRIDE;

EID: 0029251828     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.364879     Document Type: Article
Times cited : (31)

References (10)
  • 2
    • 0016118460 scopus 로고
    • The space charge dosimeter: General principles of a new method of radiation detection
    • A. G. Holmes-Siedle, “The space charge dosimeter: General principles of a new method of radiation detection,” Nucl. Inst. Meth., vol. 121, pp. 169–179, 1974.
    • (1974) Nucl. Inst. Meth. , vol.121 , pp. 169-179
    • Holmes-Siedle, A.G.1
  • 3
    • 0005162339 scopus 로고
    • Theory of response of radiation sensing field effect transistors
    • R. C. Hughes, “Theory of response of radiation sensing field effect transistors,” J. Appl. Phys. vol. 58, pp. 1375, 1985.
    • (1985) J. Appl. Phys. , vol.58 , pp. 1375
    • Hughes, R.C.1
  • 4
    • 33645247898 scopus 로고
    • Novice: A radiation transport and shielding code
    • Report EMP.L82.001 Jan.
    • T. Jordan, “Novice: A radiation transport and shielding code,” Experimental and Mathematical Physics Consultant, Report EMP.L82.001, Jan. 1982.
    • (1982) Experimental and Mathematical Physics Consultant
    • Jordan, T.1
  • 5
    • 84938155309 scopus 로고
    • Packaging effects on transistor radiation response
    • Dec.
    • R. A. Berger and J. L. Azarewicz, “Packaging effects on transistor radiation response,” IEEE Trans. Nucl. Sci., vol. NS-22, no. 6, Dec. 1975.
    • (1975) IEEE Trans. Nucl. Sci. , vol.NS-22 , Issue.6
    • Berger, R.A.1    Azarewicz, J.L.2
  • 6
    • 0020288667 scopus 로고
    • Dose enhancement effects in semiconductor devices
    • Dec.
    • D. M. Long, D. G. Milward, and J. Wallace, “Dose enhancement effects in semiconductor devices,” IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, Dec. 1982.
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29 , Issue.6
    • Long, D.M.1    Milward, D.G.2    Wallace, J.3
  • 9
    • 0023533304 scopus 로고
    • An evaluation of low-energy X-ray and cobalt-60 irradiations of MOS transistors
    • Dec.
    • C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, “An evaluation of low-energy X-ray and cobalt-60 irradiations of MOS transistors,” IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1535–1539, Dec. 1987.
    • (1987) IEEE Trans. Nucl. Sci. , vol.NS-34 , Issue.6 , pp. 1535-1539
    • Dozier, C.M.1    Fleetwood, D.M.2    Brown, D.B.3    Winokur, P.S.4
  • 10
    • 0026384497 scopus 로고
    • Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
    • Dec.
    • M. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, and K. L. Hughes, “Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices,” IEEE Trans. Nucl. Sci., vol. NS-38, no. 6, pp. 1187–1194, Dec. 1991.
    • (1991) IEEE Trans. Nucl. Sci. , vol.NS-38 , Issue.6 , pp. 1187-1194
    • Shaneyfelt, M.1    Fleetwood, D.M.2    Schwank, J.R.3    Hughes, K.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.