Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. II. Simplified modelling, systematic analysis and comparison with experimental measurements

Plasma Sources Science and Technology

Volumn 4, Issue 1, 1995, Pages 107-116

  Dollet, A ^a   Couderc, J P ^b   Despax, B ^a  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BIDIMENSIONAL MODELLING; DEPOSITION RATE PROFILE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION REACTOR; SYSTEMATIC ANALYSIS;

CALCULATIONS; CHEMICAL VAPOR DEPOSITION; ESTIMATION; MASS TRANSFER; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PHASE COMPOSITION; PLASMA APPLICATIONS;

SILICON NITRIDE;

EID: 0029251033     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/4/1/011     Document Type: Article

References (7)

1. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition