Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

Journal of Materials Research

Volumn 10, Issue 2, 1995, Pages 425-430

  Sivazlian, F R ^a   Stoner, B R ^b   Glass, J T ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); NUCLEATION; SEMICONDUCTING SILICON; SILICON WAFERS; SUBSTRATES;

HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD);

DIAMOND FILMS;

EID: 0029250638     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/JMR.1995.0425     Document Type: Article

References (6)

1. J. C. Angus and C. C. Hayman, Science 241, 913 (1988).
2. S. Yugo, T. Kimura, Vacuum 41, 1364 (1990).
3. B.R. Stoner, B.E. Williams, J. Mater. Res. 7, 257 (1992).
4. B.R. Stoner, Phys. Rev. B45, 11067 (1992).
5. Y.H. Lee, P.D. Richard, Appl. Phys. Lett. 56, 620–622 (1990).
6. H. V. Boenig, Plasma Science and Technology (Cornell University Press, Ithaca and London, 1982), pp. 23–32.