An Investigation of Graded and Uniform Base GexSil-x HBT's Using a Monte Carlo Simulation

IEEE Transactions on Electron Devices

Volumn 42, Issue 2, 1995, Pages 201-207

  Hughes, David T ^a   Abram, Richard A ^a   Kelsall, Robert W ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRONS; FREQUENCIES; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING GERMANIUM COMPOUNDS;

ACOUSTIC PHONONS; ELECTRON DYNAMICS; ELECTRON TRANSPORT; OPTICAL PHONON SCATTERING; POISSON EQUATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029250415     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370079     Document Type: Article

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