Theory and experiment of the temperature dependence of GaAlAs/GaAs HBTs characteristics for power amplifier applications

Solid State Electronics

Volumn 38, Issue 2, 1995, Pages 279-286

  Bailbe J P ^a   Andrieux, L ^a   Cazarre A ^a   Camps, T ^a   Marty, A ^a   Tasselli, J ^a   Granier, H ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY DISSIPATION; HEAT RESISTANCE; MATHEMATICAL MODELS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; STABILITY; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

GALLIUM ALUMINUM ARSENIDE; HIGH SIGNAL MODE; PARASITIC RECOMBINATION; RADIOFREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029250047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00125-Y     Document Type: Article

References (9)

1. Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors