High-Performance 770-nm AlGaAs—GaAsP Tensile-Strained Quantum-Well Laser Diodes

IEEE Photonics Technology Letters

Volumn 7, Issue 2, 1995, Pages 140-143

  Agahi, Farid ^a   Lau, Kei May ^a   Baliga, Arvind ^a   Anderson, Neal G ^a   Choi, Hong K ^b  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER MODES; LASER PULSES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; STRAIN;

THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0029246657     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.345902     Document Type: Article

References (14)

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