New RTD Large-Signal DC Model Suitable for PSPICE

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 14, Issue 2, 1995, Pages 167-172

  Yan, Zhixin ^a   Deen, M J ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CELLULAR ARRAYS; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; CURRENT VOLTAGE CHARACTERISTICS; FUNCTIONS; HYSTERESIS; PIECEWISE LINEAR TECHNIQUES; SEMICONDUCTOR DEVICE MODELS;

EXPONENTIAL FUNCTIONS; FUNCTION STATEMENT; GAUSSIAN FUNCTIONS; I V CURVES; MEMORY CIRCUITS; PSPICE SIMULATION; RESONANT TUNNEL DIODE LARGE SCALE DC MODEL; RESONANT TUNNEL DIODES;

TUNNEL DIODES;

EID: 0029246241     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.370427     Document Type: Article

References (13)

1. F. Capasso, S. Sen, A. Y. Cho, and D. Sivco, “Resonant tunneling devices with multiple negative differential resistance and demonstration of three-state memory cell for multiple-valued memory applications,” IEEE Electron Device Lett., vol. 8, pp. 297–299, 1987.
2. T. H. Kuo, H. C. Lin, R. C. Potter, and D. Shupe, “A/D converter using InGaAs/InAlAs resonant tunneling diodes,” in Proc. 1989 IEEE Cornell Conf. Advanced Concepts High Speed Semiconductor Devices, Circuits, Aug. 1989, pp. 265–273.
3. C. E. Chang, P. M. Asbeck, K. C. Wang, and E. R. Brown, “Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications,” IEEE Trans. Electron Devices, vol. 40, pp. 685–691, 1993.
4. Z. X. Yan and M. J. Deen, “A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load,” IEEE J. Solid-State Circuits, vol. 27, no. 8, pp. 1198–1202, 1992.
5. L. J. Michel and M. J. Paulus, “Differential multiple-valued logic using resonant tunneling diodes,” in Proc. 20th Int. Symp. Multiple-Valued Logic, Charlotte, NC, USA, May 1990, pp. 189–195.
6. T. Kuo, H. C. Lin, U. Anandakrishnan, R. C. Potter, and D. Shupe, “Large-signal resonant tunneling diode model for SPICE3 simulation,” IEDM Tech. Dig., pp. 567–570, 1989.
7. A. Raychaudhuri, Z. X. Yan, and M. J. Deen, “Hysteresis in resonanttunneling diode-based multiple-peak driver device for multivalued SRAM cell: analysis, simulation, and experimental results,” Canadian J. Physics, vol. 70(10–11), pp. 949–958, Oct.-Nov. 1992.
8. MicroSim Corporation, CA, USA, PSPICE User's Guide, July 1989.
9. M. J. Deen, “Simple method to determine series resistance and its temperature dependence in AlAs/GaAs/AlAs double barrier resonant tunneling diodes,” Electron. Lett., vol. 28, no. 13, pp. 1195–1197, 1992.
10. H. Yoo, S. M. Goodnick, and J. R. Arther, “Transport in Alx Ga1-x As/Iny Ga1-y As resonant tunneling diode with asymmetric layers,” J. Crystal Growth, vol. 111, pp. 1095–1099, 1991.
11. R. K. Mains, J. P. Sun, and G. I. Haddad, “Observation of intrinsic bistability in resonant tunneling diode modeling,” Appl. Phys. Lett., vol. 55, no. 4, pp. 371–373, 1989.
12. B. Jogai and E. T. Koenig, “A parametric study of extrinsic bistability in the current-voltage curves of resonant-tunneling diodes,” J. Appl. Phys., vol. 69, no. 5, pp. 3381–3383, 1991.
13. E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, “Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes,” Appl. Phys. Lett., vol. 55, no. 17, pp. 1777–1779, 1989.