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Volumn 42, Issue 2, 1995, Pages 244-250

Monolithic CCD Imagers in HgCdTe

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ARRAYS; INFRARED RADIATION; MERCURY COMPOUNDS; MISFET DEVICES; RADIATION DETECTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029246214     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370073     Document Type: Article
Times cited : (6)

References (12)
  • 3
    • 84975621352 scopus 로고
    • Charge Transfer Devices for Infrared Imaging
    • Ed. R. J. Keyes, Springer-Verlag, NY
    • A. F. Milton, “Charge Transfer Devices for Infrared Imaging,” Topics in Applied Physics, vol. 19, Ed. R. J. Keyes, Springer-Verlag, NY, p.197, 1980.
    • (1980) Topics in Applied Physics , vol.19 , pp. 197
    • Milton, A.F.1
  • 4
    • 84939325426 scopus 로고
    • Charge-Coupled Devices
    • Ed. W. L. Wolfe and G. J. Zissis, ERIM, U. of Michigan, Chap. 12
    • A. J. Steckl, “Charge-Coupled Devices,” The Infrared Handbook, Ed. W. L. Wolfe and G. J. Zissis, ERIM, U. of Michigan, Chap. 12, 1985.
    • (1985) The Infrared Handbook
    • Steckl, A.J.1
  • 5
    • 84930093799 scopus 로고    scopus 로고
    • Metal-Insulator-Semiconductor Infrared Detectors, Semiconductors and Semimetals
    • R. K. Willardson and A.C. Bee Academic Press, Chap. 7
    • M. A. Kinch, “Metal-Insulator-Semiconductor Infrared Detectors, Semiconductors and Semimetals, R. K. Willardson and A. C. Bee Academic Press, Chap. 7, vol. 18, 1981.
    • , vol.18
    • Kinch, M.A.1
  • 7
    • 0019076018 scopus 로고
    • n-channel M.I.S.F.E.T.S. in epitaxi: HgCdTe/CdTe
    • G. M. Williams and E. R. Gertner, “n-channel M.I.S.F.E.T.S. in epitaxi: HgCdTe/CdTe,” Electron., Lett. vol. 16, p. 839 1980.
    • (1980) Electron., Lett , vol.16 , pp. 839
    • Williams, G.M.1    Gertner, E.R.2
  • 8
    • 0018996833 scopus 로고
    • n-channel MOS transistors in mercury-cadmium-telluride
    • Mar.
    • A. Koloany Y. T. Shacham-Diamand and I. Kidron, ‘n-channel MU transistors in mercury-cadmium-telluride,” IEEE Trans. Electron Devices, vol. 27, no. 3, pp. 591–595, Mar. 1980.
    • (1980) IEEE Trans. Electron Devices , vol.27 , Issue.3 , pp. 591-595
    • Koloany, A.1    Shacham-Diamand, Y.T.2    Kidron, I.3
  • 9
    • 0023575112 scopus 로고
    • Enhancement mode HgCdTe MISFETs and circuits fc focal plane applications
    • R. A. Schiebel, “Enhancement mode HgCdTe MISFETs and circuits fc focal plane applications,” in IEDM Tech. Dig., p. 132, 1987.
    • (1987) IEDM Tech. Dig. , pp. 132
    • Schiebel, R.A.1
  • 11
    • 0027553591 scopus 로고
    • Field-Extended Field-Effect Transistors in 0.25 eV Bandgap HgCdTe
    • Mar.
    • M. V. Wadsworth and R. W. Gooch, “Field-Extended Field-Effect Transistors in 0.25 eV Bandgap HgCdTe,” IEEE Tran. Electron Device, vol. ED-40, no. 3, pp. 487–492, Mar. 1993.
    • (1993) IEEE Tran. Electron Device , vol.ED-40 , Issue.3 , pp. 487-492
    • Wadsworth, M.V.1    Gooch, R.W.2
  • 12
    • 0016437850 scopus 로고
    • Imaging devices using the charge-coupled concept
    • Jan.
    • D. F. Barbe, “Imaging devices using the charge-coupled concept,” Proc. IEEE, vol. 63, p. 38–67, Jan. 1975.
    • (1975) Proc. IEEE , vol.63 , pp. 38-67
    • Barbe, D.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.