Reduction of 1 f noise in polysilicon emitter bipolar transistors

Solid State Electronics

Volumn 38, Issue 2, 1995, Pages 389-400

  Siabi Shahrivar, N ^a   Redman White, W ^a   Ashburn, P ^a   Kemhadjian, H A ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FLUORINE; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; OXIDES; POLYCRYSTALLINE MATERIALS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO;

CURRENT GAIN; EMITTER BASE JUNCTION; FLUORINE IMPLANTATION; INTERFACE ANNEAL; INTERFACIAL OXIDE LAYER; PASSIVATING SURFACE STATES; PERIPHERY TO AREA RATIO; POLYSILICON EMITTER BIPOLAR TRANSISTORS; SIGNAL TO NOISE RATIO REDUCTION; SURFACE RECOMBINATION CURRENTS;

BIPOLAR TRANSISTORS;

EID: 0029244620     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)00126-Z     Document Type: Article

References (41)

1. Material and process considerations for monolithic low-1/f-noise transistors
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3. Effects of diffusion-induced dislocations on the excess low-frequency noise
4. High-performance transistors with arsenic-implanted polysil emitters
5. The SIS tunnel emitter: A theory for emitters with thin interface layers
6. 1.25 /spl mu/m Deep-Groove-Isolated Self-Aligned Bipolar Circuits
7. Effect of emitter contact on current gain of silicon bipolar devices
8. Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors
9. An automatic calibrated universal measuring equipment for noise in semi-conductors
10. Flicker (1/f) noise generated by a random walk of electrons in interfaces
11. Composition of 1/f Noise in Metal-Insulator-Metal Tunnel Junctions
12. Noise due to generation and recombination of carriers in p-n junction transition regions
13. Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors
14. Origin of 1/f noise in bipolar transistors
15. Location of 1/f noise sources in BJT's and HBJT's—I. theory