Low-noise, high-speed Ga.47In.53As/Al.48In.52As 0.1-μm MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 73-76

  Rohdin, Hans ^a   Nagy, Avelina ^a   Robbins, Virginia ^a   Su, Chung yi ^a   Madden, Chris ^a   Wakita, Arlene ^a   Raggio, Jeff ^a   Seeger, Judith ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

GATE LEAKAGE; INTERFACIAL GATE RESISTANCE; LOW TEMPERATURE BUFFER LAYER; THREE STAGE AMPLIFIERS;

FIELD EFFECT TRANSISTORS;

EID: 0029239402     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)