Thermal stresses in passivated AlSiCu-lines from wafer curvature measurement

Materials Research Society Symposium - Proceedings

Volumn 356, Issue , 1995, Pages 423-428

  Burges, U ^a   Helneder, H ^a   Schneegans, M ^a   Beckers, D ^a   Hallerbach, M ^a   Schroeder, H ^a   Schilling, W ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CALCULATIONS; FINITE ELEMENT METHOD; GRAIN SIZE AND SHAPE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; STRESS RELAXATION; THERMAL CYCLING; THERMAL EFFECTS; X RAYS;

ISOTHERMAL ANNEALING; ISOTHERMAL STRESS RELAXATION; MICROELECTRONIC CIRCUITS; PASSIVATED LINES; VOID FORMATION; WAFER CURVATURE MEASUREMENT;

THERMAL STRESS;

EID: 0029239147     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)