Elementary growth process of molecular beam epitaxy

Journal of Crystal Growth

Volumn 146, Issue 1-4, 1995, Pages 326-333

  Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIFFUSION IN SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

SURFACE FLUX RATIO;

MOLECULAR BEAM EPITAXY;

EID: 0029234073     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00575-3     Document Type: Article

References (21)

1. Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
2. Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
3. Proc. 1st Intern. Conf. Epitaxial Crystal Growth
4. Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction