Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1995, Pages 12-17

  Kamigaki, Yoshiaki ^a   Hashimoto, Takashi ^a   Aoki, Masaaki ^a   Yokogawa, Ken'etsu ^a   Moniwa, Masahiro ^a   Iijima, Sinpei ^a   Minami, Masataka ^a   Ishida, Hiroshi ^a   Okuhira, Hidekazu ^a   Aoki, Sigeru ^a   Yamanaka, Toshiaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; GATES (TRANSISTOR); HYDROGENATION; PARAMAGNETIC RESONANCE; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTING SILICON;

SPIN CENTERS; THRESHOLD VOLTAGE INSTABILITY;

THIN FILM TRANSISTORS;

EID: 0029233243     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1995.513646     Document Type: Conference Paper

References (8)