Comparison of the phase noise performance of HEMT and HBT based oscillators

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 697-700

  Zhang, Xiangdong ^a   Sturzebecher, Dana ^a   Daryoush, Afshin S ^a  

^a DREXEL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; PERFORMANCE; PHASE MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SIGNAL THEORY;

BOLTZMANN CONSTANT; LOW FREQUENCY; MICROWAVE FREQUENCIES; NOISE UP CONVERSION FACTOR; RESIDUAL PHASE NOISE;

MICROWAVE OSCILLATORS;

EID: 0029232932     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)