W-band monolithic 175-mW power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 419-422

  Wang, H ^a   Hwang, Y ^a   Chen, T H ^a   Biedenbender, M ^a   Streit, D C ^a   Lo, D C W ^a   Dow, G S ^a   Allen, B R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

CURTICE ETTENBERG FET ASYMMETRIC MODEL; GAIN TO DRAIN BREAKDOWN VOLTAGE; MILLIMETER WAVE FREQUENCIES; MONOLITHIC CHIP; MONOLITHIC W BAND POWER AMPLIFIER;

POWER AMPLIFIERS;

EID: 0029231074     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)