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Volumn 43, Issue 1, 1995, Pages 87-93

Consistent Small-Signal and Large-Signal Extraction Techniques for Heterojunction FET' s

Author keywords

[No Author keywords available]

Indexed keywords

CONSTRAINT THEORY; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; MATHEMATICAL MODELS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION;

EID: 0029229735     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.363003     Document Type: Article
Times cited : (49)

References (18)
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  • 2
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  • 7
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    • I. Angelov, H. Zirath, and N. Rorsman, “A new empirical nonlinear model for HEMT and MESFET devices,” IEEE Trans. Microwave Theory Tech., vol. 40, no. 12, pp. 2258–2266, 1992.
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  • 8
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    • Berroth, M.1    Bosch, R.2
  • 9
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    • A new method for determining the FET small-signal equivalent circuit
    • G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1151–1159, 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , Issue.7 , pp. 1151-1159
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  • 10
    • 0022061068 scopus 로고
    • Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's
    • K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. J. Helix, “Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's,” IEEE Trans. Electron Devices., vol. ED-32, no. 5, pp. 987–992, 1985.
    • (1985) IEEE Trans. Electron Devices. , vol.ED-32 , Issue.5 , pp. 987-992
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  • 12
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    • London Sept. 4–7
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    • Kompa, G.1    van Raay, F.2
  • 13
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  • 18
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.