Observation of the photorefractive effect in vanadium-doped CdMnTe

Optical Materials

Volumn 4, Issue 2-3, 1995, Pages 224-226

  Brost, George A ^a   Magde, Kevin M ^a   Trivedi, Sudhir ^b  

^a USAF   (United States)

^b BRIMROSE CORPORATION OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC FIELDS; ELECTROOPTICAL EFFECTS; ENERGY GAP; INFRARED RADIATION; OPTICAL MATERIALS; PHASE DIAGRAMS; SEMICONDUCTOR DOPING; VANADIUM;

GAIN COEFFICIENT; GRATING FORMATION TIME; PHOTOREFRACTIVE EFFECT; PHOTOREFRACTIVE RESPONSE; VANADIUM DOPED CADMIUM MANGANESE TELLURIUM COMPOUNDS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0029225884     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-3467(94)00063-8     Document Type: Article

References (4)

1. Ellipsometric studies of the dielectric function of Cd_{1-x}Mn_{x}Te alloys
2. Photorefractive grating formations at large modulation with alternating electric fields
3. Photorefractive response at high modulation depths in Bi_12TiO_20