Band offsets of InAsxP1-x/InP strained layer quantum wells grown by LP-MOVPE using TBAs

Materials Research Society Symposium - Proceedings

Volumn 358, Issue , 1995, Pages 1005-1010

  Beaudoin, M ^a   Masut, R A ^a   Isnard, L ^a   Desjardins, P ^a   Bensaada, A ^a   L'Esperance, G ^a   Leonelli, R ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION; ENERGY GAP; HETEROJUNCTIONS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CONDUCTION BAND OFFSET; ENVELOPE FUNCTION; INDIUM ARSENIC PHOSPHIDE; KANE BANDS; PHOSPHINE; SCHRODINGER EQUATION; TERTIARYBUTYLARSINE; WAVEFUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029224936     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)