Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm-1 hydrogen related line

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 678-681

  Bliss, D F ^a   Bryant, G G ^a   Gabbe, D ^a   Iseler, G ^a   Haller, E E ^a   Zach, F X ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DEUTERIUM; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; HYDROGEN; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

FREE CARRIER CONCENTRATION; HYDROGEN DEFECT;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029217751     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)