Anisotropic electrical properties of modulation-doped In0.52Al0.48As/InxGa1-xAs pseudomorphic heterostructures grown on InP substrate

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 217-220

  Sugiyama, Y ^a   Sano, K ^a   Uekusa, S ^a   Nakagawa, T ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

HALL MOBILITY; PSEUDOMORPHIC HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0029217069     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)