60-GHz monolithic oscillator using InGaP/InGaAs/GaAs HEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 541-544

  Kawasaki, Yoshihiro ^a   Shirakawa, Kazuo ^a   Ohashi, Yoji ^a   Saito, Tamio ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

CARRIER FREQUENCY; FEEDBACK CIRCUIT; MONOLITHIC OSCILLATOR; OSCILLATOR CIRCUIT SCHEMATIC; PHASE NOISE; REVERSE CHANNEL CONFIGURATION; SCATTERING PARAMETERS;

MICROWAVE OSCILLATORS;

EID: 0029211479     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)