SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 255, Issue 1-2, 1995, Pages 234-237

Urbach edges in light-emitting porous silicon and related materials

(4) Bustarret, E a Ligeon, M b Mihalcescu, I b Oswald, J c

a CNRS (France)

b UNIV GRENOBLE ALPES (France)

c INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

Anodic oxidation; Luminescence; Optical spectroscopy; Silicon

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANODIC OXIDATION; LIGHT EMISSION; LUMINESCENCE; OPTICAL SYSTEMS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; TEMPERATURE;

EMISSION ENERGY DEPENDENCE; EXPONENTIAL EDGE; NON-RADIATIVE RECOMBINATION EXCITATION SPECTRA; OPTICAL SPECTROSCOPY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; URBACH EDGES; VISIBLE PHOTOLUMINESCENCE EXCITATION SPECTRA;

POROUS SILICON;

EID: 0029211442 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(94)05661-V Document Type: Article

Times cited : (17)

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