Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1995, Pages 1557-1560

  Filicori, F ^a   Vannini, G ^a   Santarelli, A ^a   Mediavilla, A ^a   Tazon, A ^a   Newport, Y ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; FREQUENCY RESPONSE; HARMONIC ANALYSIS; MICROWAVE CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

DRAIN CURRENT RESPONSE; EMPIRICAL MODELING; LOW FREQUENCY DISPERSIVE EFFECTS; SURFACE STATE DENSITIES; THERMAL PHENOMENA;

FIELD EFFECT TRANSISTORS;

EID: 0029211021     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)