The electrical properties of porous silicon produced from n+ silicon substrates

Thin Solid Films

Volumn 255, Issue 1-2, 1995, Pages 12-15

  Simons, A J ^a   Cox, T I ^a   Uren, M J ^a   Calcott, P D J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

Electrical properties; Hall effect; measurements; Porous silicon; Schottky barrier

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; FERMI LEVEL; FILMS; GOLD; HALL EFFECT; POROSITY; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

HALL EFFECT MEASUREMENT; HALL MOBILITY; SCHOTTKY BARRIER;

POROUS SILICON;

EID: 0029210418     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)05622-K     Document Type: Article

References (9)

1. AC conductivity in porous silicon