Manufacturable and reliable millimeter-wave HJFET MMIC technology using novel 0.15μm MoTiPtAu gates

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 431-434

  Hori, Yasuko ^a   Onda, Kazuhiko ^a   Funabashi, Masahiro ^a   Mizutani, Hiroshi ^a   Maruhashi, Kenichi ^a   Fujihara, Akira ^a   Hosoya, Kenichi ^a   Inoue, Takashi ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; MICROWAVE AMPLIFIERS; MOLECULAR BEAM EPITAXY; MOLYBDENUM ALLOYS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CHANNEL TEMPERATURE; HETEROJUNCTION FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE DC BIAS TESTS; POWER ADDED EFFICIENCY; SCHOTTKY CONTACT LAYER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029210105     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)