SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 29, Issue 1-3, 1995, Pages 223-227

High temperature stability of chemically vapour deposited diamond diodes

(5) McKeag, Robert D a Chan, Simon S M a Johnson, Colin b Chalker, Paul R b Jackman, Richard B a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b RICARDO UK LTD (United Kingdom)

Author keywords

Diamond; Diodes; High temperature; Schottky

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HIGH TEMPERATURE OPERATIONS; METALLIZING; MORPHOLOGY; OHMIC CONTACTS; POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES; THERMODYNAMIC STABILITY; THIN FILMS; TITANIUM ALLOYS;

DIAMOND DIODES; DOPING LEVEL; HIGH TEMPERATURE STABILITY; OHMIC METALLIZATION; POLYCRYSTALLINE THIN FILM DIAMOND; SCHOTTKY CONTACTS;

DIAMOND FILMS;

EID: 0029206929 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/0921-5107(94)04046-7 Document Type: Article

Times cited : (10)

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