Silicon Carbide Wafer Bonding

Journal of the Electrochemical Society

Volumn 142, Issue 1, 1995, Pages 232-236

  Reiche, M ^b   Steckl, A J ^c  

^a DUKE UNIVERSITY   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c UNIVERSITY OF CINCINNATI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEGASSING; DENSIFICATION; INTERFACES (MATERIALS); INTERFACIAL ENERGY; OXIDATION; OXIDES; SILICON; SILICON CARBIDE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

FRACTURE ENERGY; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; WAFER BONDING;

BONDING;

EID: 0029196636     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2043876     Document Type: Article

References (14)

1. R. Davis, C. Kelner, M. Shur, W. Palmour, and J. Edmond Proc. IEEE, 79, 677 (1991).
2. J. Powell and L. Matus, in Amorphous and Crystalline Silicon Carbide, Springer Proceedings in Physics, Vol. 34, G. Harris and C. Y-W. Yang, Editors, p. 2, Springer-Verlag, Berlin (1989).
3. A. J. Steckl and J. P. Li, IEEE Trans. Electron Devices, ED-39, 64 (1992).
4. A. J. Steckl, C. Yaun, J. P. Li, and M. J. Loboda, Appl. Phys. Lett. 63, 3347 (1993).
5. Y. Kondo, T. Takauchi, K. Ishii Y. Hayashi, E. Sakuma, S. Misawa, H. Daimon, M. Yamanaka, and S. Yoshida, IEEE Electron Devices Lett., EDL-7, 404 (1986).
6. C. H. Carter, Jr., and R. F. Davis, J. Mater. Res., 1, 811 (1986).
7. J. W. Palmour, H. S. Kong, and R. F. Davis, J. Appl. Phys., 64, 2168 (1988).
8. T. Abe and J. H. Matlock, Solid State Technol., 39 (Nov. 1990).
9. W. P. Maszara, G. Goetz, A. Cavilia, and J. B. McKitterick J. Appl. Phys., 64, 4943 (1988).
10. G. Cha, R. Gafiteanu, Q.-Y. Tong, and U. Gösele, in Semiconductor Wafer Bonding: Science Technology and Applications, M. A. Schmidt, T. Abe, C. E. Hart, and H. Baumgart, Editors, PV 93–29, p. 257, The Electrochemical Society Proceedings Series, Pennington NJ (1993).
11. C. Kittel, Introduction to Solid State Physics, p. 61, John Wiley & Sons, Inc., New York (1986).
12. R. G. Horn, J. Am. Ceram. Soc., 73, 1117 (1990).
13. T. A. Michalske and E. R. Fuller, J. Am. Ceram. Soc., 68, 586 (1985).
14. Gösele and Q.-Y. Tong, in Semiconductor, Wafer Bonding: Science, Technology, and Applications, M. A., Schmidt T. Abe, C. E. Hunt, and H. Baumgart, Editors, PV 93–29, p. 395, The Electrochemical Society Proceedings Series, Pennington, NJ (1993).