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Volumn 2, Issue , 1995, Pages 879-885
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New analytical GTO - model for circuit applications
a
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
AVALANCHE DIODES;
CALCULATIONS;
CHARGE CARRIERS;
ELECTRIC BREAKDOWN;
ELECTRIC CONDUCTIVITY;
MODULATION;
NETWORKS (CIRCUITS);
RELIABILITY;
SEMICONDUCTOR DOPING;
THYRISTORS;
AVALANCHE BREAKDOWN;
BANKINJECTION;
RECOMBINATION;
SABER SIMULATOR;
SEMICONDUCTOR DEVICE MODELS;
POWER ELECTRONICS;
AVALANCHE BREAKDOWN;
BASE LAYERS;
CHARGE-CARRIER DISTRIBUTION;
CIRCUIT APPLICATION;
COMPLEX APPLICATIONS;
CONDUCTIVITY MODULATION;
SIMULATIONS AND MEASUREMENTS;
TIME DERIVATIVE;
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EID: 0029190956
PISSN: 02759306
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (5)
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References (6)
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