Optical Control and Injection Locking of Monolithically Integrated Ino.53Ga0.47As/Ino.52A10.48As 7 As MODFET Oscillators

IEEE Transactions on Electron Devices

Volumn 42, Issue 1, 1995, Pages 31-37

  Yang, David ^a   Bhattacharya, Pallab ^a   Brock, Timothy ^a   Lai, Richard ^a   Paolella, Arthur ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NUMERICAL ANALYSIS; OPTICAL VARIABLES CONTROL; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TUNING;

ADLER EQUATION; CUT OFF FREQUENCY; FREE RUNNING OSCILLATOR FREQUENCY; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; INJECTION LOCKING; MODULATION DOPED FIELD EFFECT TRANSISTORS; OPTICAL SIGNALS; OPTICAL TUNING; OSCILLATOR CIRCUITS;

MICROWAVE OSCILLATORS;

EID: 0029185313     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370039     Document Type: Article

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