Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence

Surface Science

Volumn 322, Issue 1-3, 1995, Pages 230-242

  Dillon, A C ^a   Ott, A W ^a   Way, J D ^b   George, S M ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

Aluminum oxide; Chemical vapor deposition; Epitaxy; Infrared absorption spectroscopy; Insulating films; Molecule solid reactions; Surface chemical reaction

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; THERMODYNAMIC STABILITY; THIN FILMS; VACUUM APPLICATIONS;

BINARY REACTION; INSULATING FILMS; MOLECULE SOLID REACTIONS; STRETCHING VIBRATIONS; SURFACE CHEMISTRY; ULTRAHIGH VACUUM CHAMBER;

SURFACES;

EID: 0029184808     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)90033-0     Document Type: Article

References (53)

1. Characterization of surface exchange reactions used to grow compound films
2. Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl3-CO2-H2System
3. Epitaxial Growth of Al[sub 2]O[sub 3] on Al[sub 2]O[sub 3] Substrates by Chemical Vapor Deposition
4. The reaction pathway for the growth of alumina on high surface area alumina and in ultrahigh vacuum by a reaction between trimethyl aluminum and water
5. Low-Temperature Growth of Thin Films of Al2O3by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2
6. Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2
7. Catalytic Aluminas: Surface Models and Characterization of Surface Sites
8. Mechanism of nucleation and atomic layer growth of aluminum nitride on silicon